There are two major types of preparation methods for evaporated silicon oxide barrier packaging films: physical vapour deposition (PVC) and chemical vapour deposition (CVC). Depending on the specific implementation method, there are various methods as follows. Barrier film production equipment

1. Physical vapour deposition

Physical vapour deposition is also called physical vapor deposition method, including resistive evaporation, electron beam evaporation and sputtering. Among them, resistive evaporation and electron beam evaporation need to vaporize SiO2 at high temperature, while sputtering deposition applies single-element target sputtering, which has the advantages of low deposition temperature, high deposition rate, unlimited target material and good coating quality.

Advantages.

(1) Resistance wire evaporation plating method

Resistance wire evaporation plating method is in a vacuum chamber, with a resistance wire heated SiO2, temperature up to 1700 ℃, high temperature and vacuum so that the SiO2 in the form of atoms or molecules from the surface of the vapor escape, the formation of vapour flow, the vapour flow on the surface of the substrate deposition, the formation of barrier packaging film containing SiOx coating.

(2) Electron beam evaporation coating method

E-beam evaporation coating method is put SiO2 into the water-cooled copper crucible, the direct use of electron beam heating, so that the evaporation of vapor, and then condensed on the surface of the substrate to form a barrier packaging film containing SiOx coating. E-beam bombardment of the heat source of the beam density is high, can be far greater than the resistance heating source of energy density, evaporation temperature is high (e-beam heating energy of up to 20kW / c ㎡, the temperature can be up to 3,000 ~ 6,000 ° C), and therefore particularly suitable for the production of high melting point film materials and high-purity film materials, and can have a higher rate of evaporation. As the heat can be added directly to the surface of the evaporation material, thus high thermal efficiency, heat conduction and heat radiation loss is less, the production of SiOx barrier packaging film barrier, compared with the resistance wire evaporation method of production of products, but also a significant improvement.

(3) Sputtering method

Sputtering method is also known as magnetron sputtering method or high-speed low-temperature sputtering method. Sputtering with a single element target and pouring the reaction gas for the reaction is called reaction sputtering, by adjusting the deposition process parameters, you can prepare chemically proportional or non-chemically proportional compound film, so as to achieve the purpose of adjusting the composition of the thin film coating to adjust the characteristics of the film. Compared with the evaporation method, magnetron sputtering has the advantages of strong bonding between the coating layer and the substrate, and a dense, uniform coating layer. Other advantages of magnetron sputtering are simple equipment, easy to operate, etc. In the sputtering process, as long as the working air pressure and sputtering power are kept constant, basically a stable deposition rate can be obtained. The biggest disadvantage is that the deposition rate is relatively low, in addition to the possible target poisoning, caused by the flaming and sputtering process is not stable, as well as film defects, etc., which limits its application, so there is still room for further improvement.

2. Chemical vapour deposition (PECVD)

Chemical vapour deposition, also known as plasma-enhanced chemical vapour deposition or plasma polymerisation vapour deposition, is the use of plasma means to generate electrons, ions and active groups, in the gaseous state or the surface of the substrate to carry out chemical reactions. In plasma enhanced chemical vapour deposition, a radio frequency (RF) power supply is used to generate a glow discharge (the RF power supply discharge can be set as a continuous or pulsed discharge) or a microwave (MW) discharge to dissociate the reactive gases and form a plasma, which interacts with the surface of the substrate film and deposits the film. Gu Jihai et al. had been in the packaging engineering, the principle, characteristics and application of PECVD vapour deposition technology and the development trend of ceramic film vapour deposition technology.

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